3D active edge silicon sensor results and applications
Experimental Particle Physics seminar
3D active edge silicon sensor results and applications
- Event time: 3:00pm until 4:00pm
- Event date: 1st March 2007
- Speaker: Cinzia Da Via (University of Manchester)
- Location: Room 6206, James Clerk Maxwell Building (JCMB) James Clerk Maxwell Building Peter Guthrie Tait Road Edinburgh EH9 3FD GB
Event details
Active edge 3D sensors, are a novel type of silicon devices where p
and n type electrodes penetrate through the silicon bulk instead of
being processed on the wafer surfaces. The fabrication is performed
using micromachining and standard VLSI technologies. Samples with
different inter-electrode spacing have been fabricated at Stanford
University, USA. Their response to charged particles and x-rays has
been studied using radioactive sources and particle beams with
LHC-compatible readout electronics. The 3D fast time response using
0.13 um readout electronics and their signal efficiency after an
exposure to reactor neutrons equivalent to ~1.4x10^16 high energy
protons per sq. cm. will be discussed. This exposure is a bit more
than the amount expected at the SLHC in 7 years a radius of 4 cm. Some
applications will be reviewed.
Event resources
About Experimental Particle Physics seminars
The experimental particle physics seminar series invites speakers from all over Europe to discuss the latest developments at the LHC, accelerator and non-accelerator based neutrino physics, hardware R&D and astroparticle physics. .