3D active edge silicon sensor results and applications

Experimental Particle Physics seminar

3D active edge silicon sensor results and applications

  • Event time: 3:00pm until 4:00pm
  • Event date: 1st March 2007
  • Speaker: Cinzia Da Via (University of Manchester)
  • Location: Room 6206,

Event details

Active edge 3D sensors, are a novel type of silicon devices where p and n type electrodes penetrate through the silicon bulk instead of being processed on the wafer surfaces. The fabrication is performed using micromachining and standard VLSI technologies. Samples with different inter-electrode spacing have been fabricated at Stanford University, USA. Their response to charged particles and x-rays has been studied using radioactive sources and particle beams with LHC-compatible readout electronics. The 3D fast time response using 0.13 um readout electronics and their signal efficiency after an exposure to reactor neutrons equivalent to ~1.4x10^16 high energy protons per sq. cm. will be discussed. This exposure is a bit more than the amount expected at the SLHC in 7 years a radius of 4 cm. Some applications will be reviewed.

Event resources

About Experimental Particle Physics seminars

The experimental particle physics seminar series invites speakers from all over Europe to discuss the latest developments at the LHC, accelerator and non-accelerator based neutrino physics, hardware R&D and astroparticle physics. .

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